Nexperia's 650V enhancement-mode GaN FETs offer RDS(on) values ​​from 80 to 190 mΩ in a selection of 5x6 mm and 8x8 mm DFN packages, increasing power conversion efficiency in high- and low-voltage (<650V) telecommunications/data communication, consumer charging, solar, and industrial applications. They can also be used to design brushless DC motors and precision microserver drives with higher torque and power. Nexperia also offers a 100V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150V (7 mΩ) device in an FCLGA package. These devices are suitable for a wide variety of low-voltage (<150 V) and high-power applications to deliver, for example, more efficient DC-DC converters in data centers, faster charging (e-mobility and USB Type-C™), smaller LiDAR transceivers, lower-noise class D audio amplifiers, and higher power density consumer devices such as mobile phones, laptops, and video game consoles.

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